DRIVING CIRCUIT FOR FIELD EFFECT TRANSISTOR

• Main Authors: ENDO HIROBUMI, NOZAKI YUTAKA, MATSUMOTO HIDETOSHI, OMORI KOJI
• Format: Patent
• Language: English
• Published: 28.07.1988
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

PURPOSE:To reduce the current drive capability of a transistor (TR) and to decrease the heat and current consumption of a boosting circuit by using a current source for a component deciding its charge mobility in moving an electric charge charged in the 1st capacitor into the 2nd capacitor at its discharge. CONSTITUTION:A current source 15 is used for a component deciding the mobility of an electric charge from a capacitor C1 to C2 in the boosting circuit and a voltage VF extracted at a connecting point F is fed to a gate of a field effect transistor FET. When a transistor (TR) Q1 is switched by a B signal of a square wave oscillator 1 and the TR Q1 is turned on, the potential at a connecting point C is decreased up to the GND level and the capacitor C1 is charged. When the TR Q1 is turned off, the potential at the connecting point C is increased up to a potential at a connecting point D and the capacitor C2 is boosted to a voltage higher than the power voltage VD. Since the same current continues flow from the IS to the capacitor C2 in this way, the current source IS is set small to reduce the current consumption and heat.