CORRECTION OF DEVICE

PURPOSE:To cut a wiring part of less than 1mu by a method wherein ion beams from a high-brightness ion source such as a liquid-metal ion source or the like are converged a!ld the wiring part of an IC chip is irradiated with the beams. CONSTITUTION:Ion beams are extracted from a high-brightness ion s...

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Bibliographic Details
Main Authors MIYAUCHI TAKEOKI, SHIMASE AKIRA, YAMAGUCHI HIROSHI, HONGO MIKIO
Format Patent
LanguageEnglish
Published 14.07.1988
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To cut a wiring part of less than 1mu by a method wherein ion beams from a high-brightness ion source such as a liquid-metal ion source or the like are converged a!ld the wiring part of an IC chip is irradiated with the beams. CONSTITUTION:Ion beams are extracted from a high-brightness ion source 65 such as a liquid-metal ion source or the like, the ion beam are converged to a minute spot by means of a charged-particle optical system; a minute wiring part of a device 90 is irradiated with the beams so as to remove this part. During this process, a spot diameter ranging from 0.3 to 0.1mu or less than this range can be obtained; because this process is a sputtering process where ions collide with target atoms and are scattered, this process hardly influences the circumference due to the thermal diffusion; it is possible to process the size of less than 0.3mu. By this method, it is possible to process a wiring part of less than 1mu easily and with high accuracy.
Bibliography:Application Number: JP19870303109