SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

• Main Author: OGASAWARA MAKOTO
• Format: Patent
• Language: English
• Published: 24.06.1988
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To clamp a voltage applied to a cell, and prevent a capacitor of the cell from being destroyed, by providing an active layer surrounded by an field insulating film of a different region from a memory cell with an avalanche diode for clamping a voltage. CONSTITUTION:On the periphery of a P-type Si substrate 1, a thick field SiO2 film 2 is formed, and on the region surrounded by this film, a continuous thin SiO2 film 3 and 3A are stuck. On the film 3, a plate 4 of one side electrode composed of a polycrystalline Si film constituting a capacitor C is arranged, and on the film 3A, a word line W of polycrystalline Si is arranged. Under the plate 4, an N<+> type region 5 which serves as the other electrode and a P<+> type region 6 situated under the region 5 are formed, which constitute a condenser with large capacity. By applying the word line W to a gate electrode, an N<+> type source region 7 and a drain region 8 are formed on both sides of the condenser to constitute an access transistor. Under a part of the film 3a, an N<+> type region 9 and a P<+> type region 10 are formed to constitute an avalanche diode D.