MANUFACTURE OF SEMICONDUCTOR DEVICE
PURPOSE:To obtain an SOI substrate having excellent adhesiveness, by a method wherein a pulse type voltage, whose polarity is alternately changed, is applied several times across two Si substrates at a temperature lower than or equal to a maximum heating temperature when an SOI substrate in which ju...
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Main Author | |
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Format | Patent |
Language | English |
Published |
24.06.1988
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To obtain an SOI substrate having excellent adhesiveness, by a method wherein a pulse type voltage, whose polarity is alternately changed, is applied several times across two Si substrates at a temperature lower than or equal to a maximum heating temperature when an SOI substrate in which junction is made by siloxane bond of SiO2. CONSTITUTION:On Si substrates 10 and 10' formed are SiO2 films 11 and 11' which are brought into close contact with each other; then, the work is put in N2 gas. The Si substrates 10 and 10' are heated and, at a temperature of 400-800 deg.C, a DC voltage of 50-200V, whose polarity is alternatly changed at 10-10 msec intervals, is applied several times from a bonding power source 32. Then the substrats are heated at 900-1000 deg.C. In the case where the voltage whose polarity is changed in the form of a pulse is applied, the dielectric breakdown of the SiO2 film is prevented, and the voltage drop due to non-ohmic contact of the connection part between the substrate and a lead wire can be prevented. Further the internal stress of the substrate is decreased and so damage is reduced. On heating, Si-OH radical is subjected to dehydration condensation, and siloxane (Si-O-Si) radical is generated. Electrostatic pressure caused by applying the voltage acts upon the contact part of SiO2, so that boding is more strengthen. By the effect of applying pulses, the Si substrate can maintain high quality, and by eliminating the substrate of one side, an SOI substrate of high quality can be obtained. |
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Bibliography: | Application Number: JP19860300602 |