MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: EGUCHI KOHEI
• Format: Patent
• Language: English
• Published: 13.06.1988
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; AUXILIARY PROCESSES IN PHOTOGRAPHY; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To coat excellently the SiO2 system film surface with a photoresist film, by a method wherein an SiO2 system film is formed by coating a semiconductor substrate with silanol system coating liquid, and performing a heat treatment, and organic substance is removed. CONSTITUTION:On a semiconductor substrate 1, a lower layer resist film 2 is formed, spin-coating of, for example silanol liquid OCD type 2, is performed, heating treatment, for example at 170 deg.C, is performed in an H2 atmosphere for one hour, and an SiO2 film 3, for example 1500Angstrom in thickness, is formed, Then O2 plasma treatment is performed for one minute under a condition of, for example 100W and 0.5 Torr. Then by spin-coating, photoresist OFPR800, for example, is spread in thickness up to, for example 0.5mum, to form an upper layer resist film 4, and the pattern of the upper layer resist film 4 is formed by performing exposure and development in a well-known method. With the upper layer resist film pattern as a mask, the SiO2 film 3 is subjected to selective etching in a well-known method, and further the lower layer resist film 2 is subjected to reactive ion etching wherein the SiO2 film pattern is used as a mask and O2 is used.