SEMICONDUCTOR DEVICE

PURPOSE:To accomplish a virtually different epitaxially grown film thickness on the same substrate by a method wherein, a shield type SBD element and a transistor element are going to be provided on a high density buried layer, the former is selectively provided on a low surface density buried layer...

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Bibliographic Details
Main Authors NANBA MITSUO, NAKAMURA TORU
Format Patent
LanguageEnglish
Published 10.06.1988
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To accomplish a virtually different epitaxially grown film thickness on the same substrate by a method wherein, a shield type SBD element and a transistor element are going to be provided on a high density buried layer, the former is selectively provided on a low surface density buried layer, and the latter is selectively provided on a high surface density buried layer. CONSTITUTION:A transistor element is formed on the region 17 located on the buried layer 19A formed in the surface density of 5.4X10 cm<-3>, and a shield type SBD element is formed on the region 18 located on the 19B buried layer formed in the surface density of 1X10 cm<-3> respectively. At this point, the thickness of 0.6 mum is selected for an epitaxial film 21. As a result, when compared with the method heretofore in use wherein the epitaxial film thickness is set at 0.8 mum, the reverse movement hFE can be improved from 11 to 25 on an emitter size 2X3 mum transistor, the maximum cut-off frequency fT(max) can also be improved from 2.4 GHz to 5 GHz in reverse movement and from 8 GHz to 14 GHz in forward movement, and the effect of these improvement is remarkable.
Bibliography:Application Number: JP19860284320