DEVELOPING METHOD

PURPOSE:To control the developing time thereby to obtain a resist pattern having high resolution and good reproducibility of size control by monitoring the hydrogen ion concentration of developer during developing. CONSTITUTION:A hydrogen ion concentration measuring sensor 1 is inserted into develop...

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Bibliographic Details
Main Authors KISHIMURA SHINJI, NAKAJIMA MASAYUKI
Format Patent
LanguageEnglish
Published 09.05.1988
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To control the developing time thereby to obtain a resist pattern having high resolution and good reproducibility of size control by monitoring the hydrogen ion concentration of developer during developing. CONSTITUTION:A hydrogen ion concentration measuring sensor 1 is inserted into developer 2 on a photoresist film 3. Development proceeds during steady state, and the state that hydroxide ion concentration is reduced is monitored by a pH meter. When it arrives at hydroxide ion concentration at optimal development time determined in advance, a rotary plate 5 is rotated manually or by an automatic controller, rinse solution is discharged by a rinse solution discharging nozzle 7, the developer 2 on the film 3 is removed for its development and the development is finished. Further, after a semiconductor wafer is washed, it is dried by a high speed rotation. As a result, a desired resist pattern with good reproducibility can be obtained.
Bibliography:Application Number: JP19860250122