LOW PRESSURE CVD EQUIPMENT

PURPOSE:To obtain a superior CVD film by using a turbo-molecular pump to reduce oil pollution and to extremely reduce impurities in the evacuation system of a low pressure CVD equipment. CONSTITUTION:A wafer 1 is installed in a reaction tube 2. The reaction tube 2 is installed in a diffusion furnace...

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Bibliographic Details
Main Authors AKIBA MASAKUNI, UEDA SHINJIRO, TSUTSUMI YOSHIAKI, KOBARI TOSHIAKI
Format Patent
LanguageEnglish
Published 30.03.1987
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain a superior CVD film by using a turbo-molecular pump to reduce oil pollution and to extremely reduce impurities in the evacuation system of a low pressure CVD equipment. CONSTITUTION:A wafer 1 is installed in a reaction tube 2. The reaction tube 2 is installed in a diffusion furnace 4 and is heated by a heater 3. A reaction gas is introduced in the reaction tube 2 from a gas introduction system 13. In this case, an exhaust system wherein the main pump is a turbo-molecular pump 14 is provided. Then, before the reaction of CVD film forming, the pressure in the reaction tube 2 can be reduced to approx. 10<-5>Torr or less when the pressure is reduced to minimum. This enables to obtain a superior CVD film.
Bibliography:Application Number: JP19850208614