MANUFACTURE OF AMORPHOUS SEMICONDUCTOR SOLAR CELL

• Main Author: HAMA TOSHIO
• Format: Patent
• Language: English
• Published: 14.03.1987
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To make a transparent conductive film of the pinhole part into a high resistance one by laser beam irradiation by detecting the pinhole part after forming an amorphous semiconductor thin film on an insulating transparent substrate through the transparent conductive film as an electrode on one side. CONSTITUTION:An SnO2 film 2 as a transparent electrode is vapor-deposited on a glass substrate 1 and an a-Si thin film 3 is formed on the SnO2 film 2. Over this a-Si film 3, monochromatic light is projected to detect a pinhole 5. Next, the substrate 1 on which the a-Si thin film has been formed is put in hydrogen atmosphere and is irradiated with the laser beams from a YAG laser 6. Then, the reduction of SnO2 due to hydrogen proceeds to produce SnO and a sheet resistance of the transparent conductive film in the part 7 increases. As the resistance in the part 7 where the metal put in the pinhole 5 (51: bottom of the pinhole) comes in contact with the transparent conductive film 2 is high even if an electrode film 4 is formed on the a-Si thin film 3 by, e.g., vapor deposition, the decline of the characteristics due to electric short can be prevented.