LOW NOISE TYPE ZENER DIODE

PURPOSE:To disperse current throughout a base region and to prevent heating, by forming resistors in a second conducting type impurity region, which forms a P-N junction together with a semiconductor substrate. CONSTITUTION:A voltage in the reverse direction is applied between a metal bump 15 and a...

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Bibliographic Details
Main Author ITO SHUZO
Format Patent
LanguageEnglish
Published 25.02.1987
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To disperse current throughout a base region and to prevent heating, by forming resistors in a second conducting type impurity region, which forms a P-N junction together with a semiconductor substrate. CONSTITUTION:A voltage in the reverse direction is applied between a metal bump 15 and a metal film 16. When the voltage is increased, breakdown occurs at the boundary between a guard ring 12 and a base region 13 in a P-N junction, which is formed by the base region 13 and a semiconductor substrate 11. the breakdown expands rapidly. Accompanied by the rapid expansion of the breakdown, the current density is quickly increased. Therefore, a stable state with less noises is attained without yielding fluctuation in current. The current generated by the breakdown is restricted by resistor regions 17, which are formed at the boundary between the guard ring 12 and the base region 13 at high density. Therefore, the current flows into the central part of the base region 13. As a result, heat generation is restricted.
Bibliography:Application Number: JP19850181901