INTEGRATED CIRCUIT PACKAGE

• Main Authors: OGIWARA SATORU, OISHI TOMOJI
• Format: Patent
• Language: English
• Published: 25.02.1987
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To prevent cracks in a sealing glass part very effectively, by specifying the thermal expansion coefficient of a lead material to be the same as or less than the thermal expansion coefficient of a substrate as a reference. CONSTITUTION:The thermal expansion coefficient of a lead material is specified as 40X10<-7>/ deg.C or less, which is the same as or less than the thermal expansion coefficient of a substrate. Thus, a package having excellent reliability, in which cracks penetrating through sealing glass are not yielded, can be manufactured. As the material for the substrate, silicon carbide ceramics including 0.05-5wt% beryllium is suitable. The thermal expansion coefficient of the material is 35-40X10<-7>/ deg.C. As the material used for a cap, mullite ceramics and the like are used. //The thermal expansion coefficient of the material is 35-50X10<-7>/ deg.C, and only the material having this value is used. The thermal expansion coefficient of the sealing glass is limited only to 45-55X10<-7>/ deg.C. The sealing temperature of the glass is limited to 470 deg.C or less. The glass is low melting point glass.