THIN FILM FORMING DEVICE

• Main Authors: HONDA KUNIHIKO, YANAI AKIO
• Format: Patent
• Language: English
• Published: 21.10.1987
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To obtain the titled device capable of forming a thin film having uniform thickness in the widthwise direction of a substrate by vacuum deposition by branching a gas flow to be introduced into a vacuum system in multiple stages, and blowing off the gas flow into the flow of a vaporized vapor deposition material from plural nozzles provided in the widthwise direction of the tape substrate through a baffle plate. CONSTITUTION:The tape substrate 3 is moved in the direction as shown by the arrow 4 along a cylindrical cooled can 2 provided in a vacuum vessel 1, and the inside of the vessel 1 is evacuated to vacuum. The vapor flow is sent to the substrate 3 from a vaporization source 5 furnished below the can 2. Meanwhile, a gas at a constant flow rate is introduced 13 by a flow controller 12 on the inside of the vessel 1, and the gas is further blown into the vapor flow through a tree-like branching mechanism and nozzles 6-11. Meanwhile, a part of the gas is collided with the baffle plate 22 provided in front of the group 21 of nozzles and scattered, the gas is allowed to react with the flow of the vaporized vapor deposition material, and a thin film is formed on the surface of the can 2.