FET ION SENSOR

• Main Authors: KOYAMA MASAO, SUGANO KENICHI, KATAYAMA TETSUYA
• Format: Patent
• Language: English
• Published: 29.09.1987
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

PURPOSE:To obtain a stable and long-life FET ion sensor by using a copolymer of vinyl chloride, vinyl alcohol and vinyl acetate as a film base material for an ion sensitive film. CONSTITUTION:An insulated gate type field effect transistor is constituted of a silicon substrate 1, a source 2, a drain...