FET ION SENSOR

PURPOSE:To obtain a stable and long-life FET ion sensor by using a copolymer of vinyl chloride, vinyl alcohol and vinyl acetate as a film base material for an ion sensitive film. CONSTITUTION:An insulated gate type field effect transistor is constituted of a silicon substrate 1, a source 2, a drain...

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Bibliographic Details
Main Authors KOYAMA MASAO, SUGANO KENICHI, KATAYAMA TETSUYA
Format Patent
LanguageEnglish
Published 29.09.1987
Subjects
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Summary:PURPOSE:To obtain a stable and long-life FET ion sensor by using a copolymer of vinyl chloride, vinyl alcohol and vinyl acetate as a film base material for an ion sensitive film. CONSTITUTION:An insulated gate type field effect transistor is constituted of a silicon substrate 1, a source 2, a drain 3 and a gate part consisting of an SiO2 layer 4 and an Si3N4 layer 5. the ion sensitive film 6 is formed on the gate part by dispersing a plasticizer and ion sensitive material into the copolymer of vinyl chloride, vinyl alcohol and vinyl acetate. This copolymer has preferably 200-1,000 average degree of polymn. and the ratio of the vinyl alcohol in the vinyl chloride, vinyl alcohol and vinyl acetate is preferably 1.5-20mol%.
Bibliography:Application Number: JP19860064132