ION BEAM PROCESSING

• Main Authors: HARAICHI SATOSHI, MIYAUCHI TAKEOKI, SHIMASE AKIRA, YAMAGUCHI HIROSHI
• Format: Patent
• Language: English
• Published: 16.09.1987
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To enable an ion beam processing to be performed with a high accuracy and a good reproducibility by stepwise processing the processing region of an object being processed for every required depth, scanning a local region by an ion beam after every required depth is processed, detecting the current flowing out from the object being processed in said scanning and detecting the end point of the processing. CONSTITUTION:An overall surface scanning is conducted on a processing region 5 (n) times, then a local region 6 is set in a region except the region edge portion of the processing region 5, the overall surface scanning is conducted several times and a leak current Is flowing out from a holder is measured by an ammeter 8. After the leak current is measured, to remove recesses in the processing region 5 of the local region 6, the remaining nonlocal region 12 is scanned by the ion beam the same times as those of a locaL region scanning to be processed. Thereafter, the overall surface scanning is again conducted on the processing region (n) times, the local region 6 is scanned by the ion beam, the leak current is measured and the nonlocal region 12 is processed. Such operations are repeated and, while the object to be processed is being stepwise processed for every required depth, a leak current value based on the ion beam scanning of the local region is measured after every processing of the required depth.