DEPOSITION DEVICE FOR METALLIC THIN FILM

• Main Authors: MIYAUCHI TAKEOKI, AZUMA JUNZO, HONGO MIKIO, FUKUZAWA KUNIYUKI, MIZUKOSHI KATSURO
• Format: Patent
• Language: English
• Published: 29.01.1987
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CINEMATOGRAPHY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To make an exhaust system of the titled device small-sized and contrive to reduce cost of the device by constituting a working cell of both a reaction chamber depositing a metallic thin film on a substrate and a decompression chamber wherein the reaction chamber and the substrate are closely stuck with the pressure difference between the atmosphere and it. CONSTITUTION:A working cell 2 consisting of a reaction chamber 13 and a decompression chamber 12 is mounted on a photomask 1 and both the reaction chamber 13 and the decompression chamber 12 are exhausted with a vacuum pump 11. When reaching the prescribed decompression state, a valve 4 is closed and only the reaction chamber 13 is evacuated furthermore and when reaching the prescribed degree of vacuum, a valve 3 is closed. Light is generated in an observation optical system 26 and observed via a half mirror 22, an objective lens 10, a prism 24 and an ocular 25 to perform the positioning of a defective fault part of the photomask 1. Then a valve 5 is opened to introduce a gas for depositing a metallic thin film into the reaction chamber 13 from a bomb 7 and laser beam sent from a laser beam generating means 8 is irradiated on the defective fault part via the objective lens 10 and a window 20 to perform the correction.