SEMICONDUCTOR PELLET

PURPOSE:To avoid an improper shortcircuit which occurs due to a foreign material to be mixed with the separating surface of a semiconductor pellet by coating the separating surface with an insulating film. CONSTITUTION:A P-type region 12 is formed on the surface interior of an N-type silicon substra...

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Bibliographic Details
Main Author ITO SHUZO
Format Patent
LanguageEnglish
Published 28.01.1987
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To avoid an improper shortcircuit which occurs due to a foreign material to be mixed with the separating surface of a semiconductor pellet by coating the separating surface with an insulating film. CONSTITUTION:A P-type region 12 is formed on the surface interior of an N-type silicon substrate 11, and a P-N junction is formed. A silicon oxide film 13 is laminated on the substrate 11, and a hole for exposing the region 12 is formed on the film 13. An inverted projected silver bump 15 is coated through a surface electrode metal 14 of titanium or gold on the region 12 exposed in the hole. A back metal 16 of titanium or gold is coated on the entire back surface of the substrate 11. An insulating film 20 made of polyimide or silicone rubber is coated on the entire surface of a semiconductor pellet 10 except the surface of the bump 15 and the back metal 16, and in summary may be coated on the separating surface 10a of the pellet 10.
Bibliography:Application Number: JP19850159456