THIN-FILM TRANSISTOR

• Main Authors: HIROOKA MASAAKI, ISHIHARA SHUNICHI, OTOSHI HIROKAZU, HANNA JUNICHI, SHIMIZU ISAMU
• Format: Patent
• Language: English
• Published: 07.07.1987
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

PURPOSE:To obtain an excellent TFT by a film having superior mass productivity and high quality by bringing a gas material containing deposit-film constituent atoms and a gassy halogen group oxidizer into contact, forming a plurality of precursors under the state of excitation and shaping the film, using the precursors as supply sources. CONSTITUTION:One kind of SinH2n+2(n=1-8), SiH3, SiH(SiH3), GemH2m+2(m =1-5), etc. or a mixture is used as a material, halogen gas such as F2 and the oxidizer of F, etc. under a nascent state are introduced into a reaction space at a desired flow rate and supply pressure together with a material gas and a plural kind of precursors under the state of excitation are shaped, an energy level is transferred to a low energy level, accompanied by light emission, and a semiconductor film 233 having uniform excellent physical properties is deposited equally on a conductive substrate 234. The flow ratio of the mate rial and the oxidizer is brought to 1/5-50/1 and film-formation space pressure to 0.05-10Torr, and a substrate temperature is selected properly, thus acquiring an amorphous film and a polycrystalline film. According to the film formation method, layers, such as amorphous Si 233, an amorphous P high-concentration addition layer 232, an SiO2 layer 231 are shaped, thus forming a TFT.