APPARATUS FOR FORMING THIN FILM

• Main Authors: MIYAUCHI TAKEOKI, AZUMA JUNZO, HONGO MIKIO, FUKUZAWA KUNIYUKI, MIZUKOSHI KATSURO
• Format: Patent
• Language: English
• Published: 09.06.1987
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To prevent touch of both the window for transmitting laser light and reaction gas and to prevent a thin film from being stuck on the window by comparting a reaction chamber in an apparatus for forming the thin film due to laser light into 2-3 pieces and fitting the window to the comparted chamber wherein inert gas is introduced thereinto. CONSTITUTION:A chamber 23 for chemical vapor deposition reaction is comparted into a subchamber 25 and a main chamber 33 with a diaphragm 27 having a pinhole 28. A material 35 to be worked is set in the main chamber 33 and also a transmitting window 21 of laser light 13 is fitted to the subchamber 25. The insides of both chambers 25, 33 are exhausted and also inert gas such as Ar is blown on the window 21 of the subchamber 25 through a nozzle 22 and chemical vapor deposition gas is blown on the surface of a material 35 to be worked through a nozzle 36 in the inside of the main chamber 33 and also laser light 13 emitted from an oscillator 11 is irradiated on the material 35 through the pinhole 28 and a thin film formed by the decomposition of chemical vapor deposition gas is formed thereon. In this case, the thin layer due to chemical vapor deposition is not stuck on the window 21 by making gas pressure of the inside of the subchamber 25 higher than the inside of the main chamber 33.