VACUUM EVAPORATION DEVICE

• Main Authors: YOSHIMI TAKUYA, ENDO TETSURO, WAKITANI MASAYUKI, SATO KIYOTAKE
• Format: Patent
• Language: English
• Published: 19.01.1987
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To perform the control of vapor deposition velocity in high velocity and to form a homogeneous vapor deposited film by changing an aperture area of an aperture part for passing an evaporation substance of a shielding plate in accordance with the deviation of both a signal output from an evaporation velocity detecting mechanism and an evaporation amount setting signal. CONSTITUTION:When an aperture area 14 of the aperture parts 6, 11 which are formed in a shielding plate 4 and used for passing a vapor deposition substance is in a standard state, the vapor deposition velocity on a substrate is proper and this vapor deposition velocity is detected with a film thickness monitor. When the detected value of the film monitor is deviated from a standard value, the number of revolutions of a motor shaft 12 is changed. Thereby a slide pin 8 is energized with a spring 10 or transferred in the direction A or A' shown in the arrows by resisting the energized force and an upper plate 7 is oppositely transferred for the shielding plate 4. Thereby the aperture area 14 is decreased or increased to decrease or increase the vapor deposition velocity. The quick response of the control of the vapor deposited amount is realized by this mechanism.