METHOD OF LIQUID-PHASE EPITAXIAL GROWTH

• Main Authors: YAJIMA KAZUO, KANEDA KOICHI, TAKAGI NOBUYUKI
• Format: Patent
• Language: English
• Published: 12.05.1986
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To prevent impairment of flatness of a GaAs layer, by making a weight ratio of gallium to tellurium in a growing solution of a gallium arsenide layer to be 15/1,000 or more and 35/1,000 or less. CONSTITUTION:A gallium arsenide layer including tellurium as impurities is epitaxially grown in a liquid phase. At this time, a weight ratio of gallium to tellurium in the growing solution of said gallium arsenide layer is made to be 15/1,000 or more and 35/1,000 or less. For example, on an N type GaAs substrate 1, a P type Al0.3Ga0.7As layer 2 and an N type GaAs layer 3 are grown so that each has a thickness of about 0.7mum. Impurities in the N type GaAs layer 3 is Te, and the growing solution has a ratio of Te:Ga=1.5-3.5mg:1 g. A semiconductor substrate is etched, and a stripe shaped groove 4 is formed so as to reach the substrate 1. An N type Al0.45Ga0.55As clad layer 5, an N type Al0.15Ga0.85As active layer 6, a P type Al0.45Ga0.55As clad layer 7 and P type GaAs cap layer 8 are sequentially grown continuously. Lapping is performed on the substrate 1. A P-side electrode 9 is provided on the cap layer 8, and an N-side electrode 10 is provided on the back surface of the substrate 1. After cleavage and the like, an SML laser element is completed.