SEMICONDUCTOR DEVICE

PURPOSE:To obtain the fuse of the same shape as a mask pattern or the shape approximate to it by a method wherein a fuse is formed using a mask having the part corresponding to both end parts of the effective part of the fuse formed into a roundish shape or the shape approximate to it. CONSTITUTION:...

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Bibliographic Details
Main Authors II HARUO, HIROKI MASANORI
Format Patent
LanguageEnglish
Published 24.04.1986
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain the fuse of the same shape as a mask pattern or the shape approximate to it by a method wherein a fuse is formed using a mask having the part corresponding to both end parts of the effective part of the fuse formed into a roundish shape or the shape approximate to it. CONSTITUTION:A mask is formed as a photomask to be used for light exposure or a mask to be used for electron beam patterning. The length L and the width W of the effective part of the fuse are L=3.5mum and W=2mum. Besides, the length and the width of the fuse are constituted as L'=5.5mum, W'=4mum and theta=4.5 deg.. Using the above-mentioned mask, the fuse is formed on a silicon substrate by performing a photolithographic process. To be more precise, a resist is coated on the silicon substrate, and after a prebaking is performed, a positioning is performed by superposing a mask thereon. Then, a close contact exposing is performed using a close-contact exposing device, and the fuse is formed by performing a series of processes such as developing, postbaking, etching, resist exfoliation and the like. The fuse formed by performing the above-mentioned procedures has the shape same as that of the mask pattern, or the shape approximate to that of the mask pattern.
Bibliography:Application Number: JP19840201778