SEMICONDUCTOR PACKAGE STRUCTURE

• Main Authors: SAWAHATA MAMORU, KURIHARA YASUTOSHI, INOUE KOICHI, YATSUNO KOMEI, MINAGAWA TADASHI
• Format: Patent
• Language: English
• Published: 24.04.1986
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

PURPOSE:To improve the property of lift for thermal fatigue of a semiconductor package structure by a method wherein a semiconductor substrate and a dielec tric substrate are coupled using a solder having the structure, wherein the cir cumference of the alpha initial crystal, containing a specific weight ratio of tin, lead for the remainder and having large grain diameter, is surrounded by the eutectic of relatively large grain diameter. CONSTITUTION:Solder is formed on the soldering electrode 4 located on the side of a silicon chip by performing a vapor-deposition method, and the composition of the solder is set at 50wt% of lead and 50wt% of tin. A silicon substrate 6 is plated in an electric surface, and a lead film 10 and a tin film 11 are fused. A chip-side solder 12 of almost globular shape is formed. An alumina-ceramic substrate side solder 13 consisting of 50wt% lead and 50wt% tin is formed on the surface of an alumina-ceramic substrate side soldered electrode 5. When the above is heated up again to the temperature a little higher than the liquid- phase temperature of the solder consisting of 50wt% lead and 50wt% tin in the furnace in the state wherein the chip-side solder 12 and the alumina-ceramic substrate side solder 13, a package structure is completed.