MANUFACTURE OF THIN-FILM MATERIAL FOR MAGNETOOPTIC RECORDING AND REPRODUCING

• Main Authors: MURAYAMA NAOHIRO, NAGAI AISAKU, SHOJI MASUHIRO
• Format: Patent
• Language: English
• Published: 17.04.1986
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INDUCTANCES; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAGNETS; METALLURGY; PHYSICS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSFORMERS

PURPOSE:To obtain a thin-film having excellent crystallizability by keeping a substrate on the formation of a thin-film at a specific temperature in a method in which the thin-film consisting of a Pt-Mn-Sb group compound is shaped onto the substrate. CONSTITUTION:The temperature of a substrate at a time when a thin-film is formed through sputtering is elevated to a temperature higher than 100 deg.C, thus largely improving the magnetic Kerr effect of the Pt-Mn-Sb group compound thin-film. That is, the temperature of the substrate on the formation of the thin-film is kept at a temperature higher than 100 deg.C and lower than 500 deg.C in a method in which the thin film composed of a Pt-Mn-Sb group compound is shaped onto the substrate. The thin-film is easy to generate an oxidizing reaction, etc. with the increase of a temperature even at the temperature of the melting point or lower of Pt, Mn and Sb, and the oxidation of the thin-film and other reactions are not avoided at 500 deg.C or higher. Since the degree of an improvement in a magnetic Kerr effect increases between the substrate temperature of 100-200 deg.C and the degree of the improvement gradually reduces at approximately 300 deg.C or higher, it is more preferable that the substrate temperature extends over approximately 150-250 deg.C.