SEMICONDUCTOR SENSING CIRCUIT

PURPOSE:To reduce the influence of a power source noise and to stabilize an operation by connecting a capacitor for an under-shoot counter measure and a capacitor for compensation to the fall of a gate potential with the gate of a sensing transistor. CONSTITUTION:To the respective gates of sensing t...

Full description

Saved in:
Bibliographic Details
Main Author MOMOTOMI MASAKI
Format Patent
LanguageEnglish
Published 13.11.1986
Subjects
Online AccessGet full text

Cover

Loading…
Abstract PURPOSE:To reduce the influence of a power source noise and to stabilize an operation by connecting a capacitor for an under-shoot counter measure and a capacitor for compensation to the fall of a gate potential with the gate of a sensing transistor. CONSTITUTION:To the respective gates of sensing transistors Q1, Q2 of a sensing circuit such as an address buffer circuit operating in response to an address signal AIN, a reference signal VR, respectively, capacitors C1, C2 for under shoot to which a power source potential VCC is applied and capacitors C3, C4 for compensating a gate potential lowering to which an earth potential VSS is applied are connected. Accordingly, even when the power source noise is generated, the potential VCC is lowered and the potential VSS is raised, by a coupling operation by the respective capacitors C1 and C2, and C3 and C4, the gate potential of the transistors Q1, Q2 is not changed but the influence of the power source noise is reduced to stabilize the sense circuit.
AbstractList PURPOSE:To reduce the influence of a power source noise and to stabilize an operation by connecting a capacitor for an under-shoot counter measure and a capacitor for compensation to the fall of a gate potential with the gate of a sensing transistor. CONSTITUTION:To the respective gates of sensing transistors Q1, Q2 of a sensing circuit such as an address buffer circuit operating in response to an address signal AIN, a reference signal VR, respectively, capacitors C1, C2 for under shoot to which a power source potential VCC is applied and capacitors C3, C4 for compensating a gate potential lowering to which an earth potential VSS is applied are connected. Accordingly, even when the power source noise is generated, the potential VCC is lowered and the potential VSS is raised, by a coupling operation by the respective capacitors C1 and C2, and C3 and C4, the gate potential of the transistors Q1, Q2 is not changed but the influence of the power source noise is reduced to stabilize the sense circuit.
Author MOMOTOMI MASAKI
Author_xml – fullname: MOMOTOMI MASAKI
BookMark eNrjYmDJy89L5WSQDXb19XT293MJdQ7xD1IIdvUL9vRzV3D2DHIO9QzhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxXgHBZoZGpqamlgaOxsSoAQCLaCNl
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID JPS61255590A
GroupedDBID EVB
ID FETCH-epo_espacenet_JPS61255590A3
IEDL.DBID EVB
IngestDate Fri Jul 19 11:55:04 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_JPS61255590A3
Notes Application Number: JP19850097312
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19861113&DB=EPODOC&CC=JP&NR=S61255590A
ParticipantIDs epo_espacenet_JPS61255590A
PublicationCentury 1900
PublicationDate 19861113
PublicationDateYYYYMMDD 1986-11-13
PublicationDate_xml – month: 11
  year: 1986
  text: 19861113
  day: 13
PublicationDecade 1980
PublicationYear 1986
RelatedCompanies TOSHIBA CORP
RelatedCompanies_xml – name: TOSHIBA CORP
Score 2.3758476
Snippet PURPOSE:To reduce the influence of a power source noise and to stabilize an operation by connecting a capacitor for an under-shoot counter measure and a...
SourceID epo
SourceType Open Access Repository
SubjectTerms INFORMATION STORAGE
PHYSICS
STATIC STORES
Title SEMICONDUCTOR SENSING CIRCUIT
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19861113&DB=EPODOC&locale=&CC=JP&NR=S61255590A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT4MwFH-Z8_OmqNHpDCaGGxECFDgQ4wo4SATCh9ltGaOHeZiLYPz3fa2b86K3pk368ZJff31979cC3OkWQsy1LbXWG0s1a2KpLnFnqkbYTCdM55Ehnm2RkHFlxhNr0oPXjRZGvBP6KR5HRETNEe-d2K9X20ssX-RWtvf1AqveHsLS85XmWy7mEP5zuuKPvCBL_ZQqlHpxpiS5V3Amx9Oz9rgDu1iyORqClxFXpax-U0p4DHsZ9rbsTqDHlhIc0s3PaxIcPK8D3hLsiwzNeYuVaxS2pzAsuPHSxK9omeZyESRFlDzJNMppFZVncBsGJR2rOOL0Z3nTONtOzjiHPrr97ALkRrcbl5l2U8-4Xh0dGQ0JxzZc5hhObZuXMPi7n8F_jVdwxE3FFXW6cQ397v2DDZFau_pG2OQLent4TA
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT4NAEJ7U-qg3RRutVjEx3IgQ3gdi7AICtkAKmN4IlD3ooTYW4993FlvrRa-zyezuJN9--5hvFuBW1hBilqGJlVxrolrpmmjpVilKOi1lncrsZYhlW0S6n6vhTJt14HWjhWnrhH62xRERUXPEe9Ou18vtJZbT5lau7qoXNL3de5ntCPW3XMzU2c_pgjOy3SR2YiIQYoeJEE3tlDE57p6lhx3YxS22wdDgPo-YKmX5m1K8I9hL0NuiOYYOXXDQI5uf1zg4mKwfvDnYbzM05ys0rlG4OoFhyoIXR05OsnjKp26UBtEjT4IpyYPsFG48NyO-iD0WP9MrwmQ7OKUPXTz20zPga9moLaoadVUyvToeZCQkHEOxqKmYlaGew-BvP4P_Gq-h52eTcTEOoqcLOGRhY-o6WbmEbvP-QYdIs0111cbnC0j_ez8
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+SENSING+CIRCUIT&rft.inventor=MOMOTOMI+MASAKI&rft.date=1986-11-13&rft.externalDBID=A&rft.externalDocID=JPS61255590A