SEMICONDUCTOR SENSING CIRCUIT

PURPOSE:To reduce the influence of a power source noise and to stabilize an operation by connecting a capacitor for an under-shoot counter measure and a capacitor for compensation to the fall of a gate potential with the gate of a sensing transistor. CONSTITUTION:To the respective gates of sensing t...

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Bibliographic Details
Main Author MOMOTOMI MASAKI
Format Patent
LanguageEnglish
Published 13.11.1986
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Summary:PURPOSE:To reduce the influence of a power source noise and to stabilize an operation by connecting a capacitor for an under-shoot counter measure and a capacitor for compensation to the fall of a gate potential with the gate of a sensing transistor. CONSTITUTION:To the respective gates of sensing transistors Q1, Q2 of a sensing circuit such as an address buffer circuit operating in response to an address signal AIN, a reference signal VR, respectively, capacitors C1, C2 for under shoot to which a power source potential VCC is applied and capacitors C3, C4 for compensating a gate potential lowering to which an earth potential VSS is applied are connected. Accordingly, even when the power source noise is generated, the potential VCC is lowered and the potential VSS is raised, by a coupling operation by the respective capacitors C1 and C2, and C3 and C4, the gate potential of the transistors Q1, Q2 is not changed but the influence of the power source noise is reduced to stabilize the sense circuit.
Bibliography:Application Number: JP19850097312