VISUAL SENSOR

PURPOSE:To eliminate the need of a MOS transistor for insulation by using a photodiode consisting of a p-n<-> junction between an undoped n<-> a-Si film and a p-type a-Si film as a photoelectric element constituting a picture element in a visual sensor. CONSTITUTION:A common transparent...

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Bibliographic Details
Main Author TOMITA MASAHARU
Format Patent
LanguageEnglish
Published 16.09.1986
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To eliminate the need of a MOS transistor for insulation by using a photodiode consisting of a p-n<-> junction between an undoped n<-> a-Si film and a p-type a-Si film as a photoelectric element constituting a picture element in a visual sensor. CONSTITUTION:A common transparent electrode 2 is applied onto a glass substrate 1, an amorphous silicon a-Si film 3 doped to a p-type and an undoped a-Si film 4 are laminated onto the electrode 2, and metallic electrodes 5 are shaped onto the film 4. The undoped a-Si film 4 displays a weak n-type, a p-n<-> junction is shaped between the n<-> film and the p-type a-Si film 3, and photoelectric elements in each picture element are constituted by photodiodes composed of the electrodes 2 and 5 on both surfaces. Since the resistivity of the a-Si film is higher than crystal silicon, a MOS transistor for inter-element insulation which has been required can be unnecessitated.
Bibliography:Application Number: JP19850049142