RADIATION SENSITIVE PHOTORESIST COMPOSITION

PURPOSE:To enable a resist soln. to be not degraded during long-term storage and an always correct film thickness to be formed on a semiconductor substrate or a mask substrate when the resist soln. is reused after storing for a long term by forming the resist compsn. consisting of a polymer, an org....

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Bibliographic Details
Main Author KATAOKA MUTSUO
Format Patent
LanguageEnglish
Published 01.08.1986
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
AUXILIARY PROCESSES IN PHOTOGRAPHY
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enable a resist soln. to be not degraded during long-term storage and an always correct film thickness to be formed on a semiconductor substrate or a mask substrate when the resist soln. is reused after storing for a long term by forming the resist compsn. consisting of a polymer, an org. solvent, and a radical inhibitor. CONSTITUTION:The resist compsn. consists of a homopolymer of a monomer represented by formula I, R1 being an alkyl group substd. by one ore more F atoms, an org. solvent, preferably, e.g., cellosolve type solvents, such as methyl cellosolve acetate, and ethyl cellosolve acetate, and alkyl acetates, and the radical inhibitor, preferably, such as phenols having a mol.wt. of <=600, in an amt. of 0.01-5wt% of the polymer.
Bibliography:Application Number: JP19850010942