MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To relax a stepped in the surface of an insulating layer, and to improve the reliability of a wiring by selectively forming a thermal oxide film into a region, in which there are a number of layers, in the upper surface of a substrate, removing the thermal oxide film to shape a recess and fo...

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Bibliographic Details
Main Author MIURA MASASHI
Format Patent
LanguageEnglish
Published 12.06.1986
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To relax a stepped in the surface of an insulating layer, and to improve the reliability of a wiring by selectively forming a thermal oxide film into a region, in which there are a number of layers, in the upper surface of a substrate, removing the thermal oxide film to shape a recess and forming the wiring in the recess. CONSTITUTION:A thermal oxide film 9 is formed to a memory cell region 2 section. An silicon nitride layer 8b and an silicon dioxide layer 8a and the oxide film 9 are removed through etching to shape a recess 10. A memory cell, a peripheral cir- cuit and a wiring are formed onto a substrate 1a. Consequently, a stepped section shaped on a boundary section between the region 2 and a pheripheral circuit region 3 is made largely smaller than that in a conventional insulating layer. Accordingly, the reliability of the wiring is improved.
Bibliography:Application Number: JP19840247615