MANUFACTURE OF FIELD EFFECT TRANSISTOR

• Main Authors: HAGIO MASAHIRO, KATSU SHINICHI, NANBU SHIYUUTAROU, TSUKADA KOUJI, GOUDA KAZUHIDE
• Format: Patent
• Language: English
• Published: 16.05.1985
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To reduce the gap between a source and a gate by a method wherein a gate electrode is formed by removing a part of thin film on a substrate and a source.drain electrode is formed by removing the thin film after filling the gap between the gate electrode and the thin film with materials subject to different etching speed. CONSTITUTION:A thin film 3 is formed on a GaAs substrate 2 whereon an N type layer 1 is formed than a resist film 4 is formed. When the thin film 3 is removed through an opening of the film 4 and a part of the resist film 4 is removed by evaporating a gate electrode forming metal 5, a gate electrode 6 and the thin film 3 are adjacently formed. Further when overall surface is coated with photoresist 7 and after exposing the photoresist through openings of masks 8, the exposed part is removed by developing process, the gap between the gate electrode 6 and the thin film 3 is filled with the resist 7. Next after selectively removing the film 3, source.drain electrode forming metal is evaporated before removing the resist 7. Through these procedures, a source electrode 9 and a drain electrode 10 may be formed adjoining the gate electrode 6 to reduce the gap between themselves.