SELF-MATCHING TYPE MULTI-LAYER LASER STRUCTURE

PURPOSE:To contrive to perform metallized contact ot the non plane shape in a way of self-matching by a method wherein planes and non-planes are formed along the crystal plane of an substrate and they are epitaxially grown. CONSTITUTION:The surfaces 7 and 7' of the (111) A plane are made to exp...

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Bibliographic Details
Main Authors TERUKO KOBAYASHI INOUE, REINHAATO DABURIYUU EICHI ENGERUMAN, DONARUDO ERUTON AKUREI
Format Patent
LanguageEnglish
Published 23.03.1985
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To contrive to perform metallized contact ot the non plane shape in a way of self-matching by a method wherein planes and non-planes are formed along the crystal plane of an substrate and they are epitaxially grown. CONSTITUTION:The surfaces 7 and 7' of the (111) A plane are made to expose by performing an anisotropic etching on the crystal plane (100) 6 of a substrate 5. Then, a confinement layer 4, an active layer 3, a confinement layer 2 and a cap layer 1 are successively formed by an organometallic vapor-phase growth method. According to such a way, metallized contact to the non-plane shape can be performed in a way of self-matching.
Bibliography:Application Number: JP19840167699