AMORPHOUS SILICON PHOTOSENSOR

• Main Authors: ORITSUKI RIYOUJI, KANAI HIROMI, SAITOU SUSUMU
• Format: Patent
• Language: English
• Published: 14.03.1985
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To enable to eliminate the possibility of deterioration in characteristics of amorphous Si by a method wherein a cyclized rubber photoresist material is utilized at a part of insulating material. CONSTITUTION:A Cr electrode 2 is formed on a glass substrate 1, a photodiode consisting of an amorphous Si layer 3 is provided thereon, and after an Al electrode 4 has been formed, a passivation is perfomred using a cyclized rubber photoresist film 5. Besides, a microscopic working can be freely performed on the film 5, and it can be used easily. Also, a cyclized rubber photoresist is made softer when it is sintered at a low temperature and it becomes harder when sintered at a high temperature, and in this case, desirable sintering temperature range is 100-300 deg.C. As a result, there is no possibility of characteristic deterioration of amorphous Si when an insulating material, which is a cyclized rubber photoresist in other words, is sintered and besides, a microscopic working can also be performed very easily on a microscopic material, thereby enabling to obtain an amorphous Si photosensor of excellent characteristics.