METHOD FOR ANNEALING METALLIC FILM WIRING

PURPOSE:To obtain the low-resistance film wiring by a method wherein a furnace of small heat capacity is used and a substrate is taken out after the temperature of the furnace is rapidly decreased so as to prevent the reaction of a metallic film wiring with the air. CONSTITUTION:The semiconductor wa...

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Bibliographic Details
Main Authors OKAMOTO TATSUO, SAKURAI HIROMI
Format Patent
LanguageEnglish
Published 12.02.1985
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain the low-resistance film wiring by a method wherein a furnace of small heat capacity is used and a substrate is taken out after the temperature of the furnace is rapidly decreased so as to prevent the reaction of a metallic film wiring with the air. CONSTITUTION:The semiconductor wafer 14 on which a metallic film wiring is formed is arranged in a chamber 15 of small heat capacity. An inert gas is introduced through a gas introducing inlet 17 after the chamber 15 is sealed with a lid 16, and the inert gas is exhausted through a gas exhaust vent 18 so as to make the inside of the chamber 15 into an inert gas atmosphere. After that, the semiconductor water is annealed by heating with a heating lamp 19. When the lamp 19 is turned off after the annealing is finished, the temperature of the chamber 15 rapidly decreases and that of the wafer 14 also decreases rapidly. Even if the wafer 14 is taken out from the furnace under this condition, the generation of an oxide film or a nitride film by the reaction with oxygen or nitrogen in the air does not occur because the temperature becomes low.
Bibliography:Application Number: JP19830137118