PRODUCTION OF ELASTIC SURFACE WAVE ELEMENT

PURPOSE:To prevent the disconnection of electrodes to prevent the degradation of frequency characteristics by forming normal interdigital electrodes in the center part of a metallic film vapor-deposited on a piezoelectric substrate. CONSTITUTION:A metallic film 2 is stuck to the upper face of a wafe...

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Bibliographic Details
Main Authors TAKEZAKI TOORU, WAJIMA SHIYOUSUKE, YAMASHITA KIYOBUMI
Format Patent
LanguageEnglish
Published 27.12.1985
Edition4
Subjects
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Summary:PURPOSE:To prevent the disconnection of electrodes to prevent the degradation of frequency characteristics by forming normal interdigital electrodes in the center part of a metallic film vapor-deposited on a piezoelectric substrate. CONSTITUTION:A metallic film 2 is stuck to the upper face of a wafer 1 consisting of the piezoelectric substrate by vapor deposition or the like. After a resist is applied to all of the surface of the metallic film 2, the pattern of normal IDT (interdigital electrodes) 4 and the pattern of weighting IDTs 6 are exposed on the resist in the center part of the wafer 1 and the outside peripheral part of the wafer 1. Thereafter, the resist and the unnecessary metallic film 2 are removed to form IDTs 4 and weighting IDTs 6, and the wafer 1 is cut to obtain elastic surface wave element. Since normal IDTs are formed in the center part of less defects of the metallic film 2 in this manner, the disconnection of IDTs is prevented. Consequently, the degradation of frequency characteristics is prevented.
Bibliography:Application Number: JP19840119004