MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Authors: KANOU YASUO, USUI SETSUO, SAMEJIMA TOSHIYUKI
• Format: Patent
• Language: English
• Published: 04.12.1985
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To readily obtain a thin film transistor by employing a short wavelength pulse laser light, locally crystallizing an amorphous or polycrystalline semiconductor thin film and activating an impurity. CONSTITUTION:A pulse laser light having 150-350nm of wavelength, 20nsec of pulse width, 10 -10 Wcm<-3> of peak intensity, 200-500mJ/cm of one pulse energy is employed. Aluminum gate electrode 2 is formed on a glass substrate 1, an SiO2 film 3, an amorphous hydrogenated Si film 4, and an n<+> type amorphous hydrogenated Si film 5 are superposed, the films 4, 5 are patterned to form an insula region. Mo source and drain electrodes 6, 7 are attached, and alpha-Si:H film 5 on the portion corresponding to a channel is selectively removed. Then, an SiO2 film 8 is coated, prescribed UV pulse laser light 10 is emitted from the surface, a channel 4c is polycrystallized or single crystallized to obtain a thin film FET. According to this construction, even after alpha-Si:H or electrodes are formed, a crystallization at room temperature can be performed to simplify the manufacture of a thin film FET.