SPUTTERING DEVICE OF MOLYBDENUM SILICIDE

• Main Author: SUZUKI YASUHARU
• Format: Patent
• Language: English
• Published: 27.11.1985
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To wash easily the inside of a vacuum chamber in a short time by introducing an F radical into the vacuum chamber of a sputtering device, and removing a molybdenum silicide film deposited on the inner wall or the parts of the vacuum chamber by etching. CONSTITUTION:A molybdenum silicide target 15 and a packing plate 14 in a vacuum chamber 16 are released, and the chamber is evacuated and sealed by fixing a blind to an opening part 12. Then a CF4/O2 mixed gas which is generated at the outside of the vacuum chamber 16 is supplied into a flow-rate controller 25 to control the flow rate, and introduced into a discharge generating part 27 through a feed pipe 26. Mixed gas plasma is generated in the discharge generating part 27, and an F radical here generated is introduced into the vacuum chamber 16 through a quartz tube 28 and a feed pipe 30. The radical is allowed to react with the molybdenum silicide film deposited on the inner wall or the parts of the vacuum chamber 16, and the etching is carried out. The gas existing after reaction is discharged through a vacuum discharge pipe 31.