SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To prevent the initial disconnection of a fuse by constituting at least a cutting section in the fuse by a conductive material having fine grain size. CONSTITUTION:A fuse 5 for a redunduncy circuit formed to the upper section of an insulating layer 3 in a fuse forming region for the redundun...

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Bibliographic Details
Main Author TANIGAKI YUKIO
Format Patent
LanguageEnglish
Published 03.10.1985
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To prevent the initial disconnection of a fuse by constituting at least a cutting section in the fuse by a conductive material having fine grain size. CONSTITUTION:A fuse 5 for a redunduncy circuit formed to the upper section of an insulating layer 3 in a fuse forming region for the redunduncy circuit is shaped by a first layer conductive layer in a manufacturing process in the same manner as a conductive plate 4, and constituted by a polycrystalline silicon layer 5A and a molybdenum silicide layer 5B applied to the upper section of the layer 5A. With the fuse 5 for the redunduncy circuit, wiring width W in a section such as a cutting section is shaped in apprximately 1[mum], and a resistance value is set to approximately 20-30[OMEGA/square] so as to be able to be cut by fixed voltage. With the molybdenum silicide layer 5B, grain size extends over very small one such as approximately 1,000[Angstrom ] or less, and there is no crystalline grain boundary crossing the direction of the extension of wirings even when wiring width in the cutting section is shaped in approximately 1[mum].
Bibliography:Application Number: JP19840049037