MELTING AND RECRYSTALLIZING DEVICE

• Main Authors: ARIMOTO YOSHIHIRO, IHARA MASARU
• Format: Patent
• Language: English
• Published: 18.09.1985
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To equalize melting and recrystallization by previously forming a strong heat-generating region at the central section of a lower heater when a body to be recrystallized is put into a pressure vessel filled with an inert gas, the lower heater and an upper heater are disposed, the upper heater is moved and the body to be recrystallized is recrystallized. CONSTITUTION:A plate-shaped lower heater 1 of one-sheet constitution is placed on a semiconductor wafer 2 as a body to be recrystallized, and a cylindrical heater 4 made of carbon, which is moved on the whole surface of the wafer 2 and is longer than the diameter of the wafer 2, is arranged on the lower heater 1 at a regular interval. These structures are put into a pressure vessel filled with an inert gas, and currents are flowed through the heaters 1 and 4 and the wafer 2 is melted, cooled and recrystallized. A strong heat-generating region 5, a sectional area thereof is reduced and resistance heat-generation therefrom is increased, is formed previously at the central section of the cylindrical upper heater 4 at that time, and the region 5 positively passes on the wafer 2 when the upper section of the wafer 2 is scanned by the heater 4. Accordingly the wafer 2 is heated sufficiently even when these are irregularities in the surface of the wafer 2, and recrystallization is ensured.