MELTING AND RECRYSTALLIZING DEVICE

• Main Authors: ARIMOTO YOSHIHIRO, IHARA MASARU
• Format: Patent
• Language: English
• Published: 18.09.1985
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To obtain the recrystallization of a semiconductor wafer having a large area easily by mounting a lower heater and a plurality of cylindrical upper heaters, which are positioned on the lower heater and run parallel at regular intervals, on a semiconductor wafer as a body to be recrystallized, putting these wafer and heaters into a pressure vessel filled with an inert gas and conducting these wafer and heaters in succession. CONSTITUTION:A plate-shaped heater 1 is placed on a semiconductor wafer 2 as a body to be recrystallized, and a plurality of cylindrical heaters 4 are arranged on the heater 1 at regular intervals. These structures are put into a pressure vessel filled with an inert gas such as N2, and the lower heater 1 is heated at 1,000-1,200 deg.C. Currents in an extent that the wafer is not melted are flowed through the cylindrical upper heaters 4 in succession under the state, and the whole surface of the wafer having a large area is melted and recrystallized gradually from an end section. Accordingly, there is no movable section, handling is facilitated, and recrystallization can be completed effectively.