HOMOGENIZING METHOD OF COMPOUND SEMICONDUCTOR CRYSTAL

PURPOSE:To improve easily the homogeneity of a compd. semiconductor crystal having a prescribed shape and surface by subjecting the crystal to heat treatment in an inert gaseous atmosphere. CONSTITUTION:The surface in the growing stage of a compd. semiconductor crystal having >=50mm. diameter and...

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Bibliographic Details
Main Authors TADA KOUJI, AKAI SHINICHI, MIYAZAWA SHINTAROU, MURAI SHIGEO
Format Patent
LanguageEnglish
Published 04.09.1985
Edition4
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PURPOSE:To improve easily the homogeneity of a compd. semiconductor crystal having a prescribed shape and surface by subjecting the crystal to heat treatment in an inert gaseous atmosphere. CONSTITUTION:The surface in the growing stage of a compd. semiconductor crystal having >=50mm. diameter and >=10mm. thickness is mechanically and chemically removed. The crystal is heat-treated under the conditions of 500-100 deg.C and >=1hr time in an inert gaseous or nitrogen gaseous atmosphere. The crystal surface is further removed to take out only the homogeneous part of the ingot after the heat treatment.
Bibliography:Application Number: JP19840025536