HOMOGENIZING METHOD OF COMPOUND SEMICONDUCTOR CRYSTAL
PURPOSE:To improve easily the homogeneity of a compd. semiconductor crystal having a prescribed shape and surface by subjecting the crystal to heat treatment in an inert gaseous atmosphere. CONSTITUTION:The surface in the growing stage of a compd. semiconductor crystal having >=50mm. diameter and...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
04.09.1985
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Edition | 4 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To improve easily the homogeneity of a compd. semiconductor crystal having a prescribed shape and surface by subjecting the crystal to heat treatment in an inert gaseous atmosphere. CONSTITUTION:The surface in the growing stage of a compd. semiconductor crystal having >=50mm. diameter and >=10mm. thickness is mechanically and chemically removed. The crystal is heat-treated under the conditions of 500-100 deg.C and >=1hr time in an inert gaseous or nitrogen gaseous atmosphere. The crystal surface is further removed to take out only the homogeneous part of the ingot after the heat treatment. |
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Bibliography: | Application Number: JP19840025536 |