SOLID-STATE IMAGE PICKUP ELEMENT

• Main Authors: YAMAWAKI MASAO, HINE SHIROU
• Format: Patent
• Language: English
• Published: 03.09.1985
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

PURPOSE:To increase quantity of charge accumulation without detracting threshold value of a transistor by making Hi-C area of a light detector of a MOS type solid-state image pickup element specified positional relation to vertical scanning lines and vertical signal lines. CONSTITUTION:The solid-state image pickup element is constituted by providing an area of the second conductive type constituting a light detector 15 on the main surface of the substrate and an area that constitutes an MOS transistor TR off from above-mentioned area by specified distance on the first semiconductor board. A vertical signal line 18 connected electrically to a Hi-C area 41 corresponding to the detector 15 and extending to one side is provided, and above it at specified distance, a vertical scanning line 16 connected to the gate electrode of TR through an insulating film is provided. The scanning line 16 is extended in the direction at right angles to the signal line 18. The Hi-C area 41 of the detector 15 is formed inside of the direction of extension of the signal line 16 and outside of the direction of extension of the scanning line 18. Thus, quantity of accumulation of charge is increased without detracting threshold value of TR.