NONVOLATILE SEMICONDUCTOR MEMORY

PURPOSE:To eliminate the impression of high voltage to a non-selected cell in an electrical rewriting mode and to attain high reliability of a nonvolatile semiconductor memory, by dividing a matrix into blocks and connecting a common rewriting electrode within each block. CONSTITUTION:The sources an...

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Bibliographic Details
Main Author ITOU YASUO
Format Patent
LanguageEnglish
Published 07.01.1985
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PURPOSE:To eliminate the impression of high voltage to a non-selected cell in an electrical rewriting mode and to attain high reliability of a nonvolatile semiconductor memory, by dividing a matrix into blocks and connecting a common rewriting electrode within each block. CONSTITUTION:The sources and rewriting electrodes are connected in common for memory blocks 11-13 and 15-17 of an 8-bit constitution. Then the nodes 23 are always set at the same potential. The output lines Xi and Yi of X and Y decoders are set at high potentials in accordance with the contents of an address signal applied from outside when an address signal is impressed for outside. Then only a memory cell positioned at the intersecting point between both output lines is selected.
Bibliography:Application Number: JP19830109196