SEMICONDUCTOR DEVICE

PURPOSE:To assure the excellent stability of electric characteristics by a method wherein an isolation oxide mask structure is composed of three layers comprising Si3N4/poly-Si/SiO2 assuming the sidewall oxide length of poly-Si to be BC region while a poly-Si layer formed along the periphery of an S...

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Bibliographic Details
Main Authors SHIBA TAKEO, NANBA MITSUO
Format Patent
LanguageEnglish
Published 27.08.1985
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To assure the excellent stability of electric characteristics by a method wherein an isolation oxide mask structure is composed of three layers comprising Si3N4/poly-Si/SiO2 assuming the sidewall oxide length of poly-Si to be BC region while a poly-Si layer formed along the periphery of an Si island to be a seed crystal for selective growing process. CONSTITUTION:Within a transistor made of an Si substrate 1 to be an N type collector region, a P type base region (true base region) 3, base leading parts 6 from external base regions (base-control regions) are connected to an emitter leading part 8 through the intermediary of insulating films 7 with thickness isotropic to an emitter regions 5. Besides, the emitter 5 is formed into a square region omnidistant from the edges of an isolation oxide film 2. 9 is an emitter region and 10 is a base electrode. Through these procedures, base-contact (gamma) and emitters 5, 12 may be doubly and selfmatchingly formed conforming to the processes such as poly-Si sidewall oxidation and selective poly-Si growing process subject to excellent controllability to assure the excellent stability of electric characteristics.
Bibliography:Application Number: JP19840018337