RESIST

• Main Authors: UENO TAKUMI, SUGIMOTO ARITOSHI, KADOTA KAZUYA, SATOU FUMIYOSHI, SHIRAISHI HIROSHI
• Format: Patent
• Language: English
• Published: 19.07.1985
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; AUXILIARY PROCESSES IN PHOTOGRAPHY; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To enhance the blocking ability against charged particle penetration of the whole resist to enable to make good-selective doping of impurities with only the resist, by including any one of metal, metallic compound, organometallic compound, iodine and iodic compound in dispersion state in the resist. CONSTITUTION:Any one of metal, metallic compound, organometallic compound, iodine and iodic compound is included in dispersion state in the resist. For example, a field insulating film 5 is formed on a silicon substrate 1 to form an active region and gate electrodes 7, 7 are formed on the gate insulating film 6 of the active region. Next, the side 2 of a P-MOSFET is covered by a patterned photo resist 8. When As ions are implanted, ion implantation layers 9, 9 which function as source and drain layers are formed on the side 3 of an N-MOSFET by the self alignment of the gate electrode 7. On the contrary, on the side 2 of the P-MOSFET, As ions can not penetrate through the photo resist film 8 and can not arrive at the silicon substrate 1 because of the blocking ability against charged particle penetration by the substance being included in the photo resist 8.