DEVICE FOR VAPOR DEPOSITION OF THIN FILM

• Main Authors: MORI EISAKU, YAMANISHI KENICHIROU
• Format: Patent
• Language: English
• Published: 04.07.1985
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To avoid inclusion of by-products into a vapor-deposition film produced on a surface of a substrate by jetting out a gas from a normal temperature gas container composing a cluster ion beam vapor deposition device and ionizing the gas by an ionizing means and then accelerating it by an accelerating electrode to bombard it against the surface of substrate while deflecting the accelerated ions by a deflecting electrode to bend an ion path at a right angle. CONSTITUTION:A communicating pipe from a gas container 32 containing a compound gas 31 penetrates through a bottom plate of a vacuum tank 1 having an exhaust path 2 at the bottom and a normal gas container 30 having a nozzle 30a on its top is connected with the front end of said communicating pipe. Also between them, a valve 33 is inserted and a cooling pipe 34 for determining size of cluster is wound around a periphery of the container 30. Next, ionizing means 12 and accelerating electrodes 14 are arranged above a jetting out opening of the nozzle 30a and cluster ions 15 and 16 produced there are bombarded against a surface of a substrate 18 supported by an insulating support member 21. At this time, the ions 15 and 16 are bent at a right angle by a deflecting electrode 35 to be directed to the substrate 18.