DEVICE FOR VAPOR DEPOSITION OF THIN FILM

• Main Authors: SHIYUHARA AKIRA, MORI EISAKU, MINOWA YOSHIFUMI, YAMANISHI KENICHIROU
• Format: Patent
• Language: English
• Published: 04.07.1985
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To achieve vapor deposition of the high-quality thin film by preventing clogging of a nozzle and the increase in temperature of a substrate with an extremely less electric power by heating the periphery of the nozzle of a crucible locally by irradiation with a beam such as a laser beam. CONSTITUTION:A substrate 18 is held 22 and the air in a tank 1 is exhausted to about 10<-6>Torr. The substance to be deposited in a crucible 4 is heated 6 and a vapor pressure in the crucible is kept at about 0.1-10Torr. A laser beam 31 from an oscillator 30 irradiates a periphery of a nozzle 4a to keep high temperature locally. Accordingly, vaporized substance 5 does not become droplets and is jetted into a vacuum. A part of clusters become cluster ions 16 by thermions 13 by means 12 and are accelerated by an electric field between electrodes 14 and thermion attracting electrodes 10 to be vapor-deposited on the substrate 18. Neutral clusters 15 are also deposited on the substrate 18 by the kinetic energy of jetting from the crucible. By this constitution, liquefaction of the substance to be deposited can be prevented with less electric power and dispersion of heat upward of the crucible is also prevented. The increase in temperature of the substrate 18 can be prevented and adverse conditions at fabrication of thin films are eliminated.