VAPOR-PHASE EPITAXIAL GROWTH METHOD

• Main Authors: KODAMA SHIGEO, ARIMOTO YOSHIHIRO, IHARA MASARU, KIMURA TAKAAKI, YAMAWAKI HIDEKI
• Format: Patent
• Language: English
• Published: 03.07.1985
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To improve the crystallizability of a silicon grown layer as well as to accomplish the uniform flatness and increase in mobility of electron on the surface thereof in an excellent reproducibility by a method wherein molybdenum is adhered to the surface of a single crystal substrate of magnesia spinnel or sapphire. CONSTITUTION:The magnesia spinnel single crystal substrate 23 whereon a cleaning process has been performed, is arranged on a carbon pedestal 22. The molybdenum located in a source boat 26 is heated up by a resistor 27, a molybdenum oxide is formed by introducing the mixed gas of O2 and N2 from a gas introducing hole 29a, and it is sent to the substrate 23 by gas and adhered there. The H2 gas to be introduced from gas introducing holes 29b and 29c is sent to the substrate 23 as a carrier, and a silicon epitaxial growing method is performed. Molybdenum is used by dissolving the molybdenum compound such as an oxide, a chloride or a nitrate, or a molybdenum alloy using the suitable inorganic or organic medium such as water, an acid, alcohol and the like.