SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
PURPOSE:To decrease the noise generated on a power supply line by dividing a circuit formed to a semiconductor integrated circuit device into plural circuit blocks, and supplying power to each circuit block through the power supply line of multi-layer structure. CONSTITUTION:A wire L1 applying a pow...
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Main Author | |
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Format | Patent |
Language | English |
Published |
27.06.1985
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Edition | 4 |
Subjects | |
Online Access | Get full text |
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Abstract | PURPOSE:To decrease the noise generated on a power supply line by dividing a circuit formed to a semiconductor integrated circuit device into plural circuit blocks, and supplying power to each circuit block through the power supply line of multi-layer structure. CONSTITUTION:A wire L1 applying a power voltage to an output buffer circuit OB and a wire L2 applying a ground potential thereto are constituted of the 1st aluminum layer, and they are connected to a bonding pad P1 to which a power is supplied from an external terminal VCC and a bonding pad P2 to which a ground potential is fed from an external terminal VSS. Moreover, a wire L3 applying power voltage to an input buffer circuit ADB or the like being the remaining circuit blocks and a wire L4 applying ground potential are constituted of the 2nd aluminum layer and they are connected respectively to the bonding pads P1 and P2. |
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AbstractList | PURPOSE:To decrease the noise generated on a power supply line by dividing a circuit formed to a semiconductor integrated circuit device into plural circuit blocks, and supplying power to each circuit block through the power supply line of multi-layer structure. CONSTITUTION:A wire L1 applying a power voltage to an output buffer circuit OB and a wire L2 applying a ground potential thereto are constituted of the 1st aluminum layer, and they are connected to a bonding pad P1 to which a power is supplied from an external terminal VCC and a bonding pad P2 to which a ground potential is fed from an external terminal VSS. Moreover, a wire L3 applying power voltage to an input buffer circuit ADB or the like being the remaining circuit blocks and a wire L4 applying ground potential are constituted of the 2nd aluminum layer and they are connected respectively to the bonding pads P1 and P2. |
Author | SAWADA JIROU |
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Notes | Application Number: JP19830226824 |
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PublicationDecade | 1980 |
PublicationYear | 1985 |
RelatedCompanies | HITACHI SEISAKUSHO KK |
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Snippet | PURPOSE:To decrease the noise generated on a power supply line by dividing a circuit formed to a semiconductor integrated circuit device into plural circuit... |
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Title | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
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