SEMICONDUCTOR MEMORY DEVICE

• Main Authors: FUTAMURA YASUO, NABEYA SHINJI
• Format: Patent
• Language: English
• Published: 04.06.1984
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PURPOSE:To enable to prevent the generation of the gate insulation breakdown of an address selecting MOSFET by providing a one directional element which transmits the potential of a semiconductor region to the side of a word line between the semiconductor region wherein a memory matrix is formed and...